Andrew Steckl

Bedford, Nicholas M; Winget, G Douglas; Punnamaraju, Srikoundinya; Steckl, Andrew J 2011. Immobilization of stable thylakoid vesicles in conductive nanofibers by electrospinning. Biomacromolecules, 12 3, 778-84

Punnamaraju, Srikoundinya; Steckl, Andrew J 2011. Voltage control of droplet interface bilayer lipid membrane dimensions. Langmuir : the ACS journal of surfaces and colloids, 27 2, 618-26

Kim, Duk Young; Steckl, Andrew J 2010. Electrowetting on paper for electronic paper display. ACS applied materials & interfaces, 2 11, 3318-23

Wu, Dapeng; Han, Daewoo; Steckl, Andrew J 2010. Immunoassay on free-standing electrospun membranes. ACS applied materials & interfaces, 2 1, 252-8

Han, Daewoo; Steckl, Andrew J 2009. Superhydrophobic and oleophobic fibers by coaxial electrospinning. Langmuir : the ACS journal of surfaces and colloids, 25 16, 9454-62

Wu, Dapeng; Steckl, Andrew J 2009. High speed nanofluidic protein accumulator. Lab on a chip, 9 13, 1890-6

Mahalingam, Venkataramanan; Sudarsan, Vasanthakumaran; Munusamy, Prabhakaran; van Veggel, Frank C J M; Wang, Rui; Steckl, Andrew J; Raudsepp, Mati 2008. Mg 2+-doped GaN nanoparticles as blue-light emitters: a method to avoid sintering at high temperatures. Small (Weinheim an der Bergstrasse, Germany), 4 1, 105-10

Hagen, Joshua A; Li, Wei-Xin; Spaeth, Hans; Grote, James G; Steckl, Andrew J 2007. Molecular beam deposition of DNA nanometer films. Nano letters, 7 1, 133-7

Han D.;Filocamo S.;Kirby R.;Steckl A. 12-28-2011. Deactivating chemical agents using enzyme-coated nanofibers formed by electrospinning ACS Applied Materials and Interfaces, 3 12, 4633-4639

Wang R.;Steckl A.J. 12-18-2008. Effect of Si and Er co-doping on green electroluminescence from GaN:Er ELDs Materials Research Society Symposium Proceedings, 1068 , 83-88

Steckl A.;Devrajan J.;Tlali S.;Jackson H.;Tran C.;Gorin S.;Ivanova L. 12-16-1996. Characterization of 3C-SiC crystals grown by thermal decomposition of methyltrichlorosilane Applied Physics Letters, 69 25, 3824-3826

Venkatraman V.;Steckl A. 12-15-2017. Quantitative Detection in Lateral Flow Immunoassay Using Integrated Organic Optoelectronics IEEE Sensors Journal, 17 24, 8343-8349

Hömmerich U.;Nyein E.;Lee D.;Heikenfeld J.;Steckl A.;Zavada J. 12-15-2003. Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 105 1-3, 91-96

Pellé F.;Auzel F.;Zavada J.M.;Lee D.S.;Steckl A.J. 12-15-2003. New spectroscopic data of erbium ions in GaN thin films Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 105 1-3, 126-131

Han D.;Steckl A. 12-13-2017. Selective pH-Responsive Core-Sheath Nanofiber Membranes for Chem/Bio/Med Applications: Targeted Deli ACS Applied Materials and Interfaces, 9 49, 42653-42660

Ouchen F.;Gomez E.;Joyce D.;Yaney P.;Kim S.;Williams A.;Steckl A.;Venkat N.;Grote J. 12-11-2013. Investigation of DNA nucleobases - Thin films for potential applications in electronics and photonic Proceedings of SPIE - The International Society for Optical Engineering, 8817 ,

Jones R.;Li W.;Spaeth H.;Steckl A. 12-11-2008. Direct write electron beam patterning of DNA complex thin films Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26 6, 2567-2571

Baker C.;Heikenfeld J.;Munasinghe C.;Steckl A.;Nyein E.;Hommerich U. 12-09-2003. 1.5 ?m Zn<inf>2</inf>Si<inf>0.5</inf>Ge<inf>0.5</inf>O<inf> Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2 , 1054-1055

Banerjee S.;Baker C.;Klotzkin D.;Steckl A.;Nyieh E.;Hommerich H. 12-09-2003. Gain characteristics of Er-doped ZSG waveguide optical amplifiers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 1 , 136-137

Nyein E.;Hömmerich U.;Steckl A.;Lee D.;Zavada J. 12-09-2003. Spectroscopic studies of GaN:Er, GaN:Eu, and GaN/AlGaN:Tm prepared by solid-source molecular beam ep Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2 , 876-877

Steckl A.;Heikenfeld J.;Munasinghe C.;Lee D.;Wang Y.;Jones W. 12-09-2003. Inorganic electroluminescent displays: The impact of new materials Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2 , 656-657

Nepal N.;Bedair S.;El-Masry N.;Lee D.;Steckl A.;Zavada J. 12-06-2007. Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys Applied Physics Letters, 91 22,

Venkatraman V.;Steckl A. 12-05-2015. Integrated OLED as excitation light source in fluorescent lateral flow immunoassays Biosensors and Bioelectronics, 74 , 150-155

Ray P.;Han D.;Steckl A. 12-01-2016. Urine-powered (galvanic) electric cell and sensor on paper substrate Flexible and Printed Electronics, 1 4,

Venkatraman V.;Liedert R.;Kozak K.;Steckl A. 12-01-2016. Integrated NFC power source for zero on-board power in fluorescent paper-based lateral flow immunoas Flexible and Printed Electronics, 1 4,

Zhong M.;Steckl A. 12-01-2010. Eu-doped GaN films grown by phase shift epitaxy Applied Physics Express, 3 12,

Han D.;Boyce S.T.;Steckl A.J. 12-01-2008. Versatile core-sheath biofibers using coaxial electrospinning Materials Research Society Symposium Proceedings, 1094 , 33-38

Fleischman Z.;Tafon P.;Dierolf V.;Munasinghe C.;Steckl A. 12-01-2007. Identification of defect-trap-related europium sites in gallium nitride Physica Status Solidi (C) Current Topics in Solid State Physics, 4 3, 834-837

Allen S.;Steckl A. 12-01-2006. Efficiency and stability of perylene-based dyes for emissive displays SID Conference Record of the International Display Research Conference, , 59-62

Bickle J.;Iyer S.;Mantei T.;Papautsky I.;Schulz M.;Shanov V.;Smith L.;Steckl A. 12-01-2006. Integration of nanoscale science and technology into undergraduate curricula 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, 1 , 403-405

Hagen J.;Grote J.;Li W.;Steckl A.;Diggs D.;Zetts J.;Nelson R.;Hopkins F. 12-01-2006. Organic light emitting diode with a DNA biopolymer electron blocking layer Proceedings of SPIE - The International Society for Optical Engineering, 6333 ,

Hite J.;Thaler G.T.;Park J.H.;Steckl A.J.;Abernathy C.R.;Zavada J.M.;Pearton S. 12-01-2006. Magnetic and optical properties of Eu-doped GaN Materials Research Society Symposium Proceedings, 955 , 94-96

Jones R.A.;Li W.;Hagen J.;Steckl A.J. 12-01-2006. Organic photovoltaic devices with nanometer scale thickness by molecular beam deposition 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, 2 , 764-765

Steckl A.;Hagen J.;Yu Z.;Jones R.;Li W.;Han D.;Kim D.;Spaeth H.;Grote J.;Hopkins F. 12-01-2006. Biopolymers in light emitting devices SID Conference Record of the International Display Research Conference, , 25-27

Steckl A.J.;Hagen J.A.;Yu Z.;Jones R.A.;Li W.;Han D.;Kim D.Y.;Spaeth H.;Grote J.G.;Hopkins F.K. 12-01-2006. Challenges and opportunities for biophotonic devices in the liquid state and the solid state 2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006, 1 , 159-161

Steckl A.J.;Park J.H. 12-01-2006. Visible lasing on Si using rare earth doped GaN IEEE International Conference on Group IV Photonics GFP, , 209-210

Dierolf V.;Fleischman Z.;Sandmann C.;Munasinghe C.;Steckl A. 12-01-2005. Site selective spectroscopy of Eu-doped GaN 2005 Conference on Lasers and Electro-Optics, CLEO, 1 , 306-308

Dierolf V.;Fleischman Z.;Sandmann C.;Munasinghe C.;Steckl A. 12-01-2005. Combined excitation emission spectroscopy of Eu-doped GaN Conference on Lasers and Electro-Optics Europe - Technical Digest, ,

Dierolf V.;Fleischman Z.;Sandmann C.;Wakahara A.;Fujiwara T.;Munasinghe C.;Steckl A. 12-01-2005. Combined excitation emission spectroscopy of europium ions in GaN and AlGaN films Materials Research Society Symposium Proceedings, 866 , 73-78

Diggs D.;Hagen J.;Yu Z.;Heckman E.;Kenneth Hopkins F.;Grote J.;Steckl A. 12-01-2005. Molecular binding and enhanced photoluminescence of bromocresol purple in marine derived DNA Proceedings of SPIE - The International Society for Optical Engineering, 5934 , 1-8

Grote J.G.;Heckman E.M.;Diggs D.E.;Hagen J.A.;Yaney P.P.;Steckl A.J.;Clarson S.J.;He G.S.;Zheng Q.;Prasad P.N.;Zetts J.S.;Kenneth Hopkins F. 12-01-2005. DNA-based materials for electro-optic applications: Current status Proceedings of SPIE - The International Society for Optical Engineering, 5934 , 1-6

Heikenfeld J.;Steckl A. 12-01-2005. Electrowetting-based pixelation for light wave coupling displays Digest of Technical Papers - SID International Symposium, 36 1, 746-749

Heikenfeld J.;Steckl A.J. 12-01-2005. Electrowetting light valves with greater than 80'% transmission, unlimited view angle, and video res Digest of Technical Papers - SID International Symposium, 36 2, 1674-1677

Munasinghe C.;Steckl A.;Nyein E.E.;Hömmerich U.;Peng H.;Everitt H.;Fleischman Z.;Dierolf V.;Zavada J. 12-01-2005. GaN:Eu interrupted growth epitaxy (IGE): Thin film growth and electroluminescent devices Materials Research Society Symposium Proceedings, 866 , 41-52

Nyein E.E.;Hömmerich U.;Munasinghe C.;Steckl A.J.;Zavada J.M. 12-01-2005. Excitation-wavelength dependent and time-resolved photoluminescence studies of europium doped GaN gr Materials Research Society Symposium Proceedings, 866 , 67-72

Steckl A. 12-01-2005. Light emission from rare earth lumophores in inorganic and organic hosts Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2005 , 652-653

Vrielinck H.;Izeddin I.;Ivanov V.;Gregorkiewicz T.;Callens F.;Lee D.;Steckl A.;Khaidukov N. 12-01-2005. On 2.7 ?m emission from Er-doped large bandgap hosts Materials Research Society Symposium Proceedings, 866 , 85-90

Steckl A.;Heikenfeld J. 12-01-2004. Emissive electrowetting devices for Hybrid I/O™ displays Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 1 , 250-251

Cheng L.;Steckl A.;Scofield J. 12-01-2003. Effect of trimethylsilane flow rate on the growth of SiC thin-films for fiber-optic temperature sens Journal of Microelectromechanical Systems, 12 6, 797-803

Heikenfeld J.;Steckl A. 12-01-2003. Inorganic EL displays at the crossroads Information Display, 19 12, 20-25

Hömmerich U.;Nyein E.;Lee D.;Steckl A.;Zavada J. 12-01-2003. Photoluminescence properties of in situ Tm-doped Al<inf>x</inf>Ga<inf>1-x</inf& Applied Physics Letters, 83 22, 4556-4558

Heikenfeld J.;Steckl A. 12-01-2001. AC operation of GaN:Er thin film electroluminescent display devices Materials Research Society Symposium - Proceedings, 639 ,

Mitofsky A.;Papen G.;Bishop S.;Lee D.;Steckl A. 12-01-2001. Comparison of Er ³⁺ photoluminescence and photoluminescence excitation spectr Materials Research Society Symposium - Proceedings, 639 ,

Beyette F.;Tang J.;Lee B.;Chi R.;Steckl A. 12-01-2000. Design and analysis of a smart optical storage read head for relational database applications Proceedings of SPIE - The International Society for Optical Engineering, 4109 , 317-327

Chen J.;Scofield J.;Steckl A. 12-01-2000. Formation of SiC SOI structures by direct growth on insulating layers Journal of the Electrochemical Society, 147 10, 3840-3844

Hömmerich U.;Seo J.T.;MacKenzie J.D.;Abernathy C.R.;Birkhahn R.;Steckl A.J.;Zavada J.M. 12-01-2000. Comparison of the optical properties of Er ³⁺ doped gallium nitride prepared MRS Internet Journal of Nitride Semiconductor Research, 5 SUPPL. 1,

Seshadri B.;Tang J.;Chyr I.;Steckl A.;Beyette F. 12-01-2000. Photoreceiver array with near-field resolution capability Proceedings of SPIE - The International Society for Optical Engineering, 4109 , 310-316

Tang J.;Konanki S.;Seshadri B.;Lee B.;Chi R.;Steckl A.;Beyette F. 12-01-2000. CMOS photodetectors/receivers for smart-pixel based photonic systems Proceedings of SPIE - The International Society for Optical Engineering, 4109 , 75-82

Birkhahn R.;Hudgins R.;Lee D.;Lee B.;Steckl A.;Saleh A.;Wilson R.;Zavada J. 12-01-1999. Optical and structural properties of Er³⁺-doped GaN grown by MBE Materials Research Society Symposium - Proceedings, 537 ,

Birkhahn R.H.;Hudgins R.;Lee D.S.;Lee B.K.;Steckl A.J.;Saleh A.;Wilson R.G.;Zavada J.M. 12-01-1999. Optical and structural properties of Er ³⁺doped GaN grown by MBE MRS Internet Journal of Nitride Semiconductor Research, 4 SUPPL. 1,

Chao L.C.;Lee B.K.;Chi C.J.;Cheng J.;Chyr I.;Steckl A.J. 12-01-1999. Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 17 6, 2791-2794

Chyr I.;Lee B.;Chao L.;Steckl A. 12-01-1999. Damage generation and removal in the Ga⁺ focused ion beam micromachining of G Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 17 6, 3063-3067

Chyr I.;Steckl A. 12-01-1999. Focused ion beam micromachining of GaN photonic devices Materials Research Society Symposium - Proceedings, 537 ,

Chyr I.;Steckl A.J. 12-01-1999. Focused ion beam micromachining of GaN photonic devices MRS Internet Journal of Nitride Semiconductor Research, 4 SUPPL. 1,

Garter M.;Birkhahn R.;Steckl A.;Scofield J. 12-01-1999. Visible and infrared rare-earth activated electroluminescence from erbium doped GaN Materials Research Society Symposium - Proceedings, 537 ,

Garter M.;Birkhahn R.;Steckl A.J.;Scofield J. 12-01-1999. Visible and infrared rare-earth activated electroluminescence from erbium doped GaN MRS Internet Journal of Nitride Semiconductor Research, 4 SUPPL. 1,

Saxena V.;Nong J.;Steckl A. 12-01-1999. High-Voltage Ni- And Pt-SiC Schottky Diodes Utilizing Metal Field Plate Termination IEEE Transactions on Electron Devices, 46 3, 456-464

Steckl A.;Garter M.;Birkhahn R. 12-01-1999. Visible and infrared electroluminescence from Er-doped GaN Schottky diodes Annual Device Research Conference Digest, , 200-201

Steckl A.J.;Chyr I. 12-01-1999. Focused ion beam micromilling of GaN and related substrate materials (sapphire, SiC, and Si) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 17 2, 362-365

Birkhahn R.;Steckl A. 12-01-1998. Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates Applied Physics Letters, 73 15, 2143-2145

Chen J.;Steckl A.J.;Loboda M.J. 12-01-1998. Heteroepitaxial growth of SiC on Si by gas source MBE with silacyclobutane Materials Science Forum, 264-268 PART 1, 239-242

Devrajan J.;Steckl A.J.;Tran C.A.;Stall R.A. 12-01-1998. Optical properties of GaN films grown on SiC/Si Materials Science Forum, 264-268 PART 2, 1149-1152

Saxena V.;Steckl A. 12-01-1998. Chapter 3 Building Blocks for SiC Devices: Ohmic Contacts, Schottky Contacts, and p-n Junctions Semiconductors and Semimetals, 52 C, 77-160

Saxena V.;Steckl A.J. 12-01-1998. High voltage 4H SiC rectifiers using Pt and Ni metallization Materials Science Forum, 264-268 PART 2, 937-940

Saxena V.;Steckl A.J. 12-01-1998. Fast and anisotropic reactive ion etching of 4H and 6H SiC in NF<inf>3</inf> Materials Science Forum, 264-268 PART 2, 829-832

Steckl A.;Birkhahn R. 12-01-1998. Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy Applied Physics Letters, 73 12, 1700-1702

Steckl A.;Garter M.;Birkhahn R.;Scofield J. 12-01-1998. Green electroluminescence from Er-doped GaN Schottky barrier diodes Applied Physics Letters, 73 17, 2450-2452

Chen P.;Steckl A. 12-01-1995. Selective compositional mixing in GaAs/AlGaAs superlattice induced by low dose Si focused ion beam i Journal of Applied Physics, 77 11, 5616-5624

Yuan C.;Steckl A.;Chaudhuri J.;Thokala R.;Loboda M. 12-01-1995. Reduced temperature growth of crystalline 3C-SiC films on 6H-SiC by chemical vapor deposition from s Journal of Applied Physics, 78 2, 1271-1273

Steckl A.; Su J. 12-01-1994. SiC devices for space electronics: Phase I-high voltage, temperature hard contacts SAE Technical Papers, ,

Steckl A.;Chen P.;Cao X.;Jackson H.;Kumar M.;Boyd J. 12-01-1994. GaAs quantum well distributed Bragg reflection laser with AlGaAs/GaAs superlattice gratings fabricat Applied Physics Letters, 67 , 1786

Steckl A.;Su J.;Xu J.;Li J.;Yuan C.;Yih P.;Mogul H. 12-01-1994. Selective-area room temperature visible photoluminescence from SiC/Si heterostructures Applied Physics Letters, 64 11, 1419-1420

Xu J.;Steckl A. 12-01-1994. Fabrication of visibly photoluminescent Si microstructures by focused ion beam implantation and wet Applied Physics Letters, 65 16, 2081-2083

Yuan C.;Steckl A.;Loboda M. 12-01-1994. Effect of carbonization on the growth of 3C-SiC on Si (111) by silacyclobutane Applied Physics Letters, 64 22, 3000-3002

Li J.;Steckl A. 12-01-1993. AFM study of nucleation and void formation in SiC carbonization of Si Materials Research Society Symposium Proceedings, 280 , 739-744

Li J.;Steckl A.;Golecki I.;Reidinger F.;Wang L.;Ning X.;Pirouz P. 12-01-1993. Structural characterization of nanometer SiC films grown on Si Applied Physics Letters, 62 24, 3135-3137

Mogul H.;Steckl A.;Novak S. 12-01-1993. Shallow Si p+-n junctions fabricated by focused ion beam Ga + implantation through thin Ti and TiSi2 Journal of Applied Physics, 74 4, 2318-2322

Steckl A.;Roth M.;Powell J.;Larkin D. 12-01-1993. Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates Applied Physics Letters, 62 20, 2545-2547

Steckl A.;Su J. 12-01-1993. High voltage, temperature-hard 3C-SiC schottky diodes using All-Ni metallization Technical Digest - International Electron Devices Meeting, , 695-998

Steckl A.;Xu J.;Mogul H. 12-01-1993. Photoluminescence from stain-etched polycrystalline Si thin films Applied Physics Letters, 62 17, 2111-2113

Steckl A.;Xu J.;Mogul H.;Mogren S. 12-01-1993. Doping-induced selective area photoluminescence in porous silicon Applied Physics Letters, 62 16, 1982-1984

Steckl A.;Yuan C.;Li J.;Loboda M. 12-01-1993. Growth of crystalline 3C-SiC on Si at reduced temperatures by chemical vapor deposition from silacyc Applied Physics Letters, 63 24, 3347-3349

Steckl A.J.;Su J.N.;Xu J.;Li J.P.;Yuan C.;Yih P.H.;Mogul H.C. 12-01-1993. Characterization of photoluminescence from anodically etched SiC/Si heterostructures Materials Research Society Symposium Proceedings, 298 , 361-366

Steckl A.J.;Xu J.;Mogul H.C. 12-01-1993. Photoluminescence of chemically etched polycrystalline and amorphous Si thin films Materials Research Society Symposium Proceedings, 298 , 211-216

Tong Q.;Gosele U.;Yuan C.;Steckl A. 12-01-1993. Feasibility study of SiC on oxide by wafer bonding and layer transferring IEEE International SOI Conference, , 60-61

Jackson H.E.;Choo A.G.;Weiss B.L.;Boyd J.T.;Steckl A.J.;Chen P.;Burnham R.D.;Smith S.C. 12-01-1992. Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by fo Proceedings of SPIE - The International Society for Optical Engineering, 1678 , 154-158

Mogul H.C.;Steckl A.J.;Webster G.;Pawlik M.;Novak S. 12-01-1992. Electrochemical capacitance-voltage depth profiling of nanometer-scale layers fabricated by Ga+ focu Applied Physics Letters, 61 5, 554-556

Steckl A.;Li J. 12-01-1992. Uniform ?-SiC thin-film growth on Si by low pressure rapid thermal chemical vapor deposition Applied Physics Letters, 60 17, 2107-2109

Steckl A.;Mogren S.;Roth M.;Li J. 12-01-1992. Atomic probe imaging of ?-SiC thin films grown on (100) Si Applied Physics Letters, 60 12, 1495-1497

Steckl A.;Mogul H.;Mogren S. 12-01-1992. Localized fabrication of Si nanostructures by focused ion beam implantation Applied Physics Letters, 60 15, 1833-1835

Steckl A.;Yih P. 12-01-1992. Residue-free reactive ion etching of ?-SiC in CHF<inf>3</inf>/O <inf>2</inf> Applied Physics Letters, 60 16, 1966-1968

Lin C.M.;Steckl A.J.;Chow T.P. 12-01-1989. Sub-100-nm p ⁺ -n shallow junctions fabricated by group III dual ion implanta Applied Physics Letters, 54 18, 1790-1792

Higuchi-Rusli R.;Corelli J.;Steckl A.;Jin H. 12-01-1988. Characteristics and surface analysis of ion beam deposition from binary boron platinum (Pt<inf> Journal of Applied Physics, 63 3, 878-886

Lin C.M.;Steckl A.J.;Chow T.P. 12-01-1988. Si p⁺-n shallow junction fabrication using on-axis Ga ⁺ Applied Physics Letters, 52 24, 2049-2051

Pan W.;Steckl A. 12-01-1987. ANISOTROPIC AND SELECTIVE REACTIVE ION ETCHING OF SiC IN CHF//3 AND OXYGEN PLASMA. Materials Research Society Symposia Proceedings, 76 , 157-162

Tarro R.;Warden J.;Corelli J.;Moore J.;Steckl A.;Kumar S. 12-01-1985. ELECTRON SPIN RESONANCE STUDIES OF IRRADIATED POLYMETHYLMETHACRYLATE (PMMA). , , 537-544

Liu W.;Corelli J.;Steckl A.;Moore J.;Silverman J. 12-01-1984. Polymethyl methacrylate resist sensitivity enhancement in x-ray lithography by in situ polymerizatio Applied Physics Letters, 44 10, 973-975

Steckl A.;Moore J.;Corelli J.;Liu W. 12-01-1984. IMAGE ENHANCEMENT IN HIGH-RESLUTION LITHOGRAPHY THROUGH POLYMER GRAFTING TECHNIQUES. Digest of Technical Papers - Symposium on VLSI Technology, , 60-61

Chow D.;McDonald J.;King D.;Steckl A. 12-01-1983. COMPARISON BETWEEN HAAR AND WALSH TRANSFORM 'THINNING' OF THE PATTERN DATABASE FOR PROXIMITY EFFECT , , 65-74

Chow T.;Steckl A. 12-01-1983. REVIEW OF REFRACTORY GATES FOR MOS VLSI. Technical Digest - International Electron Devices Meeting, , 513-517

Chow T.;Steckl A. 12-01-1983. REVIEW OF PLASMA ETCHING OF REFRACTORY METAL SILICIDES. Proceedings - The Electrochemical Society, 83-10 , 362-381

Chow T.;Steckl A. 12-01-1983. REVIEW OF PLASMA ETCHING OF REFRACTORY METAL SILICIDES. Electrochemical Society Extended Abstracts, 83-1 , 328-329

Chow T.P.;Hamzeh K.;Steckl A.J. 12-01-1983. Thermal oxidation of niobium silicide thin films Journal of Applied Physics, 54 5, 2716-2719

Lu W.;Chow T.;Steckl A.;Katz W. 12-01-1983. THERMAL OXIDATION OF SPUTTERED SILICON CARBIDE THIN FILMS. Electrochemical Society Extended Abstracts, 83-1 , 133

Vidinski W.;Steckl A.;Corelli J. 12-01-1983. Correlation of photoluminescence and symmetry studies with photoexcitation and decay processes of in Journal of Applied Physics, 54 7, 4097-4103

Bencuya S.S.;STeckl A.J.;Vogelsong T.L. 12-01-1982. COEFFICIENT ACCURACY FOR CDD PACKET SPLITTING TECHNIQUES. Technical Digest - International Electron Devices Meeting, , 123-126

Chow T.;Steckl A. 12-01-1982. DEVELOPMENT OF REFRACTORY GATE METALLIZATION FOR VLSI. Electrochemical Society Extended Abstracts, 82-2 , 353-354

Chow T.P.;Steckl A.J. 12-01-1982. Plasma etching of sputtered Mo and MoSi<inf>2</inf> thin films in NF <inf>3</in Journal of Applied Physics, 53 8, 5531-5540

Follett D.;Weiss K.;Moore J.;Steckl A.;Liu W. 12-01-1982. POLARITY REVERSAL OF PMMA BY TREATMENT WITH CHLOROSILANES. Electrochemical Society Extended Abstracts, 82-2 , 321-322

Rude C.;Chow T.;Steckl A. 12-01-1982. Characterization of NbSi<inf>2</inf> thin films Journal of Applied Physics, 53 8, 5703-5709

Vidinski W.;Corelli J.;Steckl A. 12-01-1982. CORRELATION OF STRESS-SYMMETRY EXPERIMENTS WITH PHOTOEXCITATION AND DECAY PROCESSES FOR INFRARED-ACT Electrochemical Society Extended Abstracts, 82-2 , 361-362

Vogelsong T.L.;Tiemann J.J.;Steckl A.J. 12-01-1982. HIGH-Q BANDPASS FILTER DEMONSTRATING CHARGE DOMAIN TECHNOLOGY. Technical Digest - International Electron Devices Meeting, , 123-126

Chow T.;Steckl A.;Brown D. 12-01-1981. The effect of annealing on the properties of silicidized molybdenum thin films Journal of Applied Physics, 52 10, 6331-6336

Zetterlund B.;Steckl A. 12-01-1981. Low temperature recombination lifetime in Si metal oxide semiconductor field effect transistors Applied Physics Letters, 39 2, 155-156

Chow T.;Brown D.;Steckl A.;Garfinkel M. 12-01-1980. Silane silicidation of Mo thin films Journal of Applied Physics, 51 11, 5981-5985

Chow T.P.;Steckl A.J. 12-01-1980. Plasma etching characteristics of sputtered MoSi<inf>2</inf> films Applied Physics Letters, 37 5, 466-468

Chow T.P.;Steckl A.J. 12-01-1980. Size effects in MoSi<inf>2</inf>-gate MOSFET's Applied Physics Letters, 36 4, 297-299

Elabd H.;Steckl A. 12-01-1980. Structural and compositional properties of the PbS-Si heterojunction Journal of Applied Physics, 51 1, 726-737

Steckl A.;Mohammed G. 12-01-1980. The effect of ambient atmosphere in the annealing of indium tin oxide films Journal of Applied Physics, 51 7, 3890-3895

Steckl A.;Tam K.;Motamedi M. 12-01-1979. Direct injection readout of the p-n PbS-Si heterojunction detector Applied Physics Letters, 35 7, 537-539

Das P.;Steckl A. 12-01-1970. Current oscillations in cadmium sulphide with optically polished parallel surfaces Applied Physics Letters, 16 4, 163-165

Heikenfeld J.;Steckl A. 11-27-2000. Alternating current thin-film electroluminescence of GaN:Er Applied Physics Letters, 77 22, 3520-3522

Gomez E.;Venkatraman V.;Grote J.;Steckl A. 11-24-2014. DNA bases thymine and adenine in bio-organic light emitting diodes Scientific Reports, 4 ,

Kim D.;Steckl A. 11-24-2010. Electrowetting on paper for electronic paper display ACS Applied Materials and Interfaces, 2 11, 3318-3323

Steckl A.;Spaeth H.;Singh K.;Grote J.;Naik R. 11-21-2008. Chirality of sulforhodamine dye molecules incorporated in DNA thin films Applied Physics Letters, 93 19,

Park J.;Steckl A. 11-15-2004. Laser action in Eu-doped GaN thin-film cavity at room temperature Applied Physics Letters, 85 20, 4588-4590

Lee D.;Steckl A.;Rack P.;Fitz-Gerald J. 11-07-2005. Cathodoluminescence and its temperature dependence in Tm-doped Al <inf>x</inf>Ga<inf& Physica Status Solidi C: Conferences, 2 7, 2765-2769

Nyein E.;Hömmerich U.;Lee D.;Steckl A.;Zavada J. 11-07-2005. Spectroscopic studies of the infrared emission from Tm doped Al <inf>x</inf>Ga<inf> Physica Status Solidi C: Conferences, 2 7, 2796-2799

Wojtowicz T.;Ruterana P.;Lee D.;Steckl A. 11-07-2005. Transmission electron microscopy of GaN layers in-situ doped with Er during plasma assisted MBE Physica Status Solidi C: Conferences, 2 7, 2484-2487

Fleischman Z.;Munasinghe C.;Steckl A.;Wakahara A.;Zavada J.;Dierolf V. 11-01-2009. Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy Applied Physics B: Lasers and Optics, 97 3, 607-618

Heikenfeld J.;Steckl A. 11-01-2004. Liquid light Information Display, 20 11, 26-31

Baker C.;Heikenfeld J.;Steckl A. 11-01-2002. Photoluminescent and electroluminescent Zn<inf>2</inf>Si<inf>0.5</inf>Ge< IEEE Journal on Selected Topics in Quantum Electronics, 8 6, 1420-1426

Cheng J.;Steckl A. 11-01-2002. Focused ion beam fabricated microgratings for integrated optics applications IEEE Journal on Selected Topics in Quantum Electronics, 8 6, 1323-1330

Cheng J.;Steckl A. 11-01-2001. Mg-Ga liquid metal ion source for implantation doping of GaN Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19 6, 2551-2554

Chyr I.;Steckl A. 11-01-2001. GaN focused ion beam micromachining with gas-assisted etching Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19 6, 2547-2550

Steckl A.;Chen P.;Jackson H.;Choo A.;Cao X.;Boyd J.;Kumar M. 11-01-1995. Review of focused ion beam implantation mixing for the fabrication of GaAs-based optoelectronic devi Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 13 6, 2570-2575

Steckl A.;Ray P. 10-26-2018. Stress Biomarkers in Biological Fluids and Their Point-of-Use Detection ACS Sensors, 3 10, 2025-2044

Peng H.;Lee C.;Everitt H.;Munasinghe C.;Lee D.;Steckl A. 10-22-2007. Spectroscopic and energy transfer studies of Eu3+ centers in GaN Journal of Applied Physics, 102 7,

Li H.;Han D.;Pauletti G.;Steckl A. 10-21-2014. Blood coagulation screening using a paper-based microfluidic lateral flow device Lab on a Chip, 14 20, 4035-4041

Gomez E.;Spaeth H.;Steckl A.;Grote J. 10-11-2011. Fabrication of natural DNA-containing organic light emitting diodes Proceedings of SPIE - The International Society for Optical Engineering, 8103 ,

Steckl A.;Garter M.;Lee D.;Heikenfeld J.;Birkhahn R. 10-11-1999. Blue emission from Tm-doped GaN electroluminescent devices Applied Physics Letters, 75 15, 2184-2186

Hite J.;Thaler G.;Khanna R.;Abernathy C.;Pearton S.;Park J.;Steckl A.;Zavada J. 10-09-2006. Optical and magnetic properties of Eu-doped GaN Applied Physics Letters, 89 13,

Steckl A.;Devrajan J.;Tran C.;Stall R. 10-07-1996. SiC rapid thermal carbonization of the (111)Si semiconductor-on-insulator structure and subsequent m Applied Physics Letters, 69 15, 2264-2266

You H.;Spaeth H.;Linhard V.;Steckl A. 10-06-2009. Role of surfactants in the interaction of dye molecules in natural DNA polymers Langmuir, 25 19, 11698-11702

You H.;Steckl A. 10-01-2013. Electrowetting on non-fluorinated hydrophobic surfaces Journal of the Society for Information Display, 21 10, 411-416

Izeddin I.;Gregorkiewicz T.;Lee D.;Steckl A. 10-01-2004. Photoluminescence and excitation spectroscopy of the 1.5 ?m Er-related band in MBE-grown GaN layers Superlattices and Microstructures, 36 4-6, 701-705

Cheng L.;Steckl A.;Scofield J. 10-01-2003. SiC thin-film Fabry-Perot interferometer for fiber-optic temperature sensor IEEE Transactions on Electron Devices, 50 10, 2159-2164

Chen J.;Scofield J.;Steckl A. 10-01-2000. Formation of SiC SOI structures by direct growth on insulating layers Journal of the Electrochemical Society, 147 10, 3845-3849

Chao L.;Lee B.;Chi C.;Cheng J.;Chyr I.;St?eckl A. 09-27-1999. Upconversion luminescence of Er-implanted GaN films by focused-ion-beam direct write Applied Physics Letters, 75 13, 1833-1835

Lee D.;Steckl A. 09-24-2001. Room-temperature-grown rare-earth-doped GaN luminescent thin films Applied Physics Letters, 79 13, 1962-1964

Lee D.;Steckl A. 09-23-2002. Enhanced blue and green emission in rare-earth-doped GaN electroluminescent devices by optical photo Applied Physics Letters, 81 13, 2331-2333

Bedford N.;Han D.;Steckl A. 09-22-2008. Electrospun biopolymer-based micro/nanofibers Biennial University/Government/Industry Microelectronics Symposium - Proceedings, , 139-141

Kim D.;Herman S.;Steckl A. 09-22-2008. I-V and gain characteristics of electrowetting-based liquid field effect transistor Biennial University/Government/Industry Microelectronics Symposium - Proceedings, , 2-5

Steckl A. 09-22-2008. NanoBioMaterials - From BioLEDs to tissue engineering Biennial University/Government/Industry Microelectronics Symposium - Proceedings, , 41-43

Zhao D.;Wang T.;Han D.;Rusinek C.;Steckl A.;Heineman W. 09-15-2015. Electrospun Carbon Nanofiber Modified Electrodes for Stripping Voltammetry Analytical Chemistry, 87 18, 9315-9321

Lee D.;Steckl A. 09-15-2003. Enhanced blue emission from Tm-doped Al<inf>x</inf>Ga<inf>1-x</inf>N electro Applied Physics Letters, 83 11, 2094-2096

Blumenschein N.;Han D.;Steckl A. 09-04-2015. Phase diagram characterization using magnetic beads as liquid carriers Journal of Visualized Experiments, 2015 103,

Hegener M.;Li H.;Han D.;Steckl A.;Pauletti G. 09-01-2017. Point-of-care coagulation monitoring: first clinical experience using a paper-based lateral flow dia Biomedical Microdevices, 19 3,

Bedford N.;Dickerson M.;Drummy L.;Koerner H.;Singh K.;Vasudev M.;Durstock M.;Naik R.;Steckl A. 09-01-2012. Nanofi ber-based bulk-heterojunction organic solar cells using coaxial electrospinning Advanced Energy Materials, 2 9, 1136-1144

You H.;Steckl A. 09-01-2012. Electrowetting on flexible substrates Journal of Adhesion Science and Technology, 26 12-17, 1931-1939

Mu H.;Li W.;Jones R.;Steckl A.;Klotzkin D. 09-01-2007. A comparative study of electrode effects on the electrical and luminescent characteristics of Alq< Journal of Luminescence, 126 1, 225-229

Seo J.;Hömmerich U.;Steckl A.;Birkhahn B.;Zavada J. 09-01-2006. Green luminescence and excited state thermalization in Er-doped gallium nitride Journal of the Korean Physical Society, 49 3, 943-946

Park J.;Steckl A. 09-01-2005. Demonstration of a visible laser on silicon using Eu-doped GaN thin films Journal of Applied Physics, 98 5,

Steckl A.;Heikenfeld J.;Allen S. 09-01-2005. Light wave coupled flat panel displays and solid-state lighting using hybrid inorganic/organic mater IEEE/OSA Journal of Display Technology, 1 1, 157-166

Heikenfeld J.;Steckl A. 09-01-2002. Rare-earth-doped GaN switchable color electroluminescent devices IEEE Transactions on Electron Devices, 49 9, 1545-1551

Tang J.;Seshadri B.;Naughton K.;Lee B.;Chi R.;Steckl A.;Beyette F. 09-01-2000. CMOS-based photoreceiver arrays for page-oriented optical storage access IEEE Photonics Technology Letters, 12 9, 1234-1236

Steckl A.J.;Zavada J.M. 09-01-1999. Photonic applications of rare-earth-doped materials MRS Bulletin, 24 9, 16-17

Heikenfeld J.;Garter M.;Lee D.;Birkhahn R.;Steckl A. 08-30-1999. Red light emission by photoluminescence and electroluminescence from Eu-doped GaN Applied Physics Letters, 75 9, 1189-1191

Han D.;Steckl A. 08-28-2013. Triaxial electrospun nanofiber membranes for controlled dual release of functional molecules ACS Applied Materials and Interfaces, 5 16, 8241-8245

Steckl A.;Li J. 08-28-1992. Rapid thermal chemical vapor deposition growth of nanometer-thin SiC on silicon Thin Solid Films, 216 1, 149-154

You H.;Steckl A. 08-26-2013. Versatile electrowetting arrays for smart window applications-from small to large pixels on fixed an Solar Energy Materials and Solar Cells, 117 , 544-548

Bedford N.;Steckl A. 08-25-2010. Photocatalytic self cleaning textile fibers by coaxial electrospinning ACS Applied Materials and Interfaces, 2 8, 2448-2455

Nepal N.;Zavada J.;Lee D.;Steckl A. 08-25-2008. Dynamics of ultraviolet emissions in Tm-doped AlN using above band gap excitation Applied Physics Letters, 93 6,

Han D.;Steckl A. 08-18-2009. Superhydrophobic and oleophobic fibers by coaxial electrospinning Langmuir, 25 16, 9454-9462

Li W.;Jones R.;Spaeth H.;Steckl A. 08-09-2010. Dose effects in electron beam irradiation of DNA-complex thin films Applied Physics Letters, 97 6,

Lee D.;Heikenfeld J.;Steckl A.;Hommerich U.;Seo J.;Braud A.;Zavada J. 08-06-2001. Optimum Er concentration for in situ doped GaN visible and infrared luminescence Applied Physics Letters, 79 6, 719-721

Han D.;Sasaki M.;Yoshino H.;Kofuji S.;Sasaki A.;Steckl A. 08-01-2017. In-vitro evaluation of MPA-loaded electrospun coaxial fiber membranes for local treatment of gliobla Journal of Drug Delivery Science and Technology, 40 , 45-50

Heikenfeld J.;Steckl A. 08-01-2002. Contrast-enhancement in black dielectric electroluminescent devices IEEE Transactions on Electron Devices, 49 8, 1348-1352

Moore J.;Corelli J.;Steckl A.;Warden J.;Tarro R.;Liu W.;Randall J. 08-01-1984. RESIST SENSITIVITY ENHANCEMENT IN MICROLITHOGRAPHY BY IN-SITU POLYMERIZATION. American Chemical Society, Polymer Preprints, Division of Polymer Chemistry, 25 2, 105-106

Lee B.;Chi R.;Chao D.;Cheng J.;Chry I.;Beyette F.;Steckl A. 07-20-2001. High-density Er-implanted GaN optical memory devices Applied Optics, 40 21, 3552-3558

Seo J.;Hömmerich U.;Lee D.;Heikenfeld J.;Steckl A.;Zavada J. 07-17-2002. Thermal quenching of photoluminescence from Er-doped GaN thin films Journal of Alloys and Compounds, 341 1-2, 62-66

Sivaraman R.;Clarson S.J.;Lee B.K.;Steckl A.J.;Reinhardt B.A. 07-17-2000. Photoluminescence studies and read/write process of a strong two-photon absorbing chromophore Applied Physics Letters, 77 3, 328-330

You H.;Steckl A. 07-12-2010. Three-color electrowetting display device for electronic paper Applied Physics Letters, 97 2,

Bedford N.;Pelaez M.;Han C.;Dionysiou D.;Steckl A. 07-07-2012. Photocatalytic cellulosic electrospun fibers for the degradation of potent cyanobacteria toxin micro Journal of Materials Chemistry, 22 25, 12666-12674

Pan M.;Steckl A. 07-07-2003. Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition Applied Physics Letters, 83 1, 9-11

Heikenfeld J.;Steckl A. 07-04-2005. High-transmission electrowetting light valves Applied Physics Letters, 86 15, 1-3

Steckl A.;Park J.;Zavada J. 07-01-2007. Prospects for rare earth doped GaN lasers on Si Materials Today, 10 7-8, 20-27

Steckl A.;Heikenfeld J.;Lee D.;Garter M.;Baker C.;Wang Y.;Jones R. 07-01-2002. Rare-earth-doped GaN: Growth, properties, and fabrication of electroluminescent devices IEEE Journal on Selected Topics in Quantum Electronics, 8 4, 749-766

Yih P.H.;Saxena V.;Steckl A.J. 07-01-1997. A review of SiC reactive ion etching in fluorinated plasmas Physica Status Solidi (B) Basic Research, 202 1, 605-624

Steckl A.;Chen P.;Cao X.;Jackson H.;Kumar M.;Boyd J. 07-01-1995. GaAs quantum well distributed Bragg reflection laser with AlGaAs/GaAs superlattice gratings fabricat Applied Physics Letters, 67 2, 179-181

Higuchi-Rusli R.;Corelli J.;Steckl A.;Cadien K. 07-01-1987. Development of test bed system for high melting temperature alloy fabrication and mass spectroscopy Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 5 4, 2073-2076

Hiouchi-Rusli R.;Corelli J.;Steckl A.;Jin H. 07-01-1987. Surface Analysis Of Palladium Boride Liquid Metal Ion Beam Deposition On Silicon Single-Crystal Soli Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 5 4, 1362-1366

McDonald J.;Rajapakse R.;Lin H.;Selvaraj R.;Corelli J.;Jin H.;Balakrishnan S.;Steckl A. 06-30-1987. Optimized focused ion beam inspection and repair of wafer scale interconnections Proceedings of SPIE - The International Society for Optical Engineering, 773 , 206-215

Li H.;Han D.;Pauletti G.;Hegener M.;Steckl A. 06-28-2018. Correction: Correcting the effect of hematocrit in whole blood coagulation analysis on paper-based l Analytical Methods, 10 24, 2939

Li H.;Han D.;Pauletti G.;Hegener M.;Steckl A. 06-28-2018. Correcting the effect of hematocrit in whole blood coagulation analysis on paper-based lateral flow Analytical Methods, 10 24, 2869-2874

Mahalingam V.;Bovero E.;Munusamy P.;Van Veggel F.C.J.M.;Wang R.;Steckl A.J. 06-19-2009. Optical and structural characterization of blue-emitting Mg²⁺- and Zn<sup& Journal of Materials Chemistry, 19 23, 3889-3894

Kim D.;Steckl A. 06-15-2010. Complementary electrowetting devices on plasma-treated fluoropolymer surfaces Langmuir, 26 12, 9474-9483

Lee C.;Everitt H.;Lee D.;Steckl A.;Zavada J. 06-15-2004. Temperature dependence of energy transfer mechanisms in Eu-doped GaN Journal of Applied Physics, 95 12, 7717-7724

Blumenschein N.;Han D.;Caggioni M.;Steckl A. 06-11-2014. Magnetic particles as liquid carriers in the microfluidic lab-in-tube approach to detect phase chang ACS Applied Materials and Interfaces, 6 11, 8066-8072

Tirgar A.;Han D.;Steckl A. 06-06-2018. Absorption of Ethylene on Membranes Containing Potassium Permanganate Loaded into Alumina-Nanopartic Journal of Agricultural and Food Chemistry, 66 22, 5635-5643

Fraiwan A.;Sundermier S.;Han D.;Steckl A.J.;Hassett D.J.;Choi S. 06-01-2013. Enhanced performance of micro-electro-mechanical-systems (MEMS) microbial fuel cells using electrosp Fuel Cells, 13 3, 336-341

Allen S.;Steckl A. 06-01-2007. ELiXIR - Solid-state luminaire with enhanced light extraction by internal reflection IEEE/OSA Journal of Display Technology, 3 2, 155-159

So F.;Steckl A. 06-01-2007. Journal of Display Technology: Guest Editorial IEEE/OSA Journal of Display Technology, 3 2, 90

Li W.;Jones R.;Allen S.;Heikenfeld J.;Steckl A. 06-01-2006. Maximizing Alq<inf>3</inf> OLED internal and external efficiencies: Charge balanced devi IEEE/OSA Journal of Display Technology, 2 2, 143-151

Chen J.;Steckl A.;Loboda M. 06-01-2000. In situ N<inf>2</inf>-doping of SiC films grown on Si(111) by chemical vapor deposition Journal of the Electrochemical Society, 147 6, 2324-2327

Ray P.;Steckl A.J. 05-24-2019. Label-Free Optical Detection of Multiple Biomarkers in Sweat, Plasma, Urine, and Saliva ACS Sensors, 4 5, 1346-1357

Hagen J.;Li W.;Grote J.;Steckl A. 05-23-2006. Red/Blue electroluminescence from Europium-doped organic light emitting diodes Proceedings of SPIE - The International Society for Optical Engineering, 6117 ,

Yu Z.;Hagen J.;Grote J.;Steckl A. 05-23-2006. Red photoluminescence emission of laser dye doped DNA and PMMA Proceedings of SPIE - The International Society for Optical Engineering, 6117 ,

Punnamaraju S.;You H.;Steckl A. 05-22-2012. Triggered release of molecules across droplet interface bilayer lipid membranes using photopolymeriz Langmuir, 28 20, 7657-7664

Hagen J.;Li W.;Steckl A.;Grote J. 05-15-2006. Enhanced emission efficiency in organic light-emitting diodes using deoxyribonucleic acid complex as Applied Physics Letters, 88 17,

Citrin P.;Northrup P.;Birkhahn R.;Steckl A. 05-15-2000. Local structure and bonding of Er in GaN: A contrast with Er in Si Applied Physics Letters, 76 20, 2865-2867

Glinka Y.;Foreman J.;Everitt H.;Lee D.;Steckl A. 05-08-2009. Direct and indirect photoluminescence excitation and ultraviolet emission from Tm-doped Al<inf> Journal of Applied Physics, 105 8,

You H.;Steckl A. 05-01-2013. Lightweight electrowetting display on ultra-thin glass substrate Journal of the Society for Information Display, 21 5, 192-197

Chen J.;Steckl A.J.;Loboda M.J. 05-01-1998. Molecular beam epitaxy growth of SiC on Si(111) from silacyclobutane Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16 3, 1305-1308

Naghski D.;Boyd J.;Jackson H.;Steckl A. 05-01-1998. Potential for size reduction of AlGaAs optical channel waveguide structures fabricated by focused io Optics Communications, 150 1-6, 97-100

Xu J.;Steckl A.J. 05-01-1995. Stain-etched porous silicon visible light emitting diodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 13 3, 1221-1224

Elabd H.;Steckl A. 05-01-1980. Auger analysis of the PbS-Si heterojunction Journal of Electronic Materials, 9 3, 525-549

Yu Z.;Zhou Y.;Klotzkin D.;Grote J.;Steckl A. 04-30-2007. Stimulated emission of sulforhodamine 640 doped DNA distributed feedback (DFB) laser devices Proceedings of SPIE - The International Society for Optical Engineering, 6470 ,

Heikenfeld J.;Steckl A. 04-29-2004. Fabrication and performance characteristics of black-dielectric electroluminescent 160 × 80-pixel di Journal of the Society for Information Display, 12 1, 57-64

Hömmerich U.;Seo J.;Abernathy C.;Steckl A.;Zavada J. 04-24-2001. Spectroscopic studies of the visible and infrared luminescence from Er doped GaN Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 81 1-3, 116-120

Steckl A.;Heikenfeld J.;Lee D.;Garter M. 04-24-2001. Multiple color capability from rare earth-doped gallium nitride Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 81 1-3, 97-101

Zavada J.;Gregorkiewicz T.;Steckl A. 04-24-2001. Rare earth doped semiconductors III Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 81 1-3, 1-2

Zavada J.;Gregorkiewicz T.;Steckl A. 04-24-2001. Preface: Rare earth doped semiconductors III Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 81 1-3, 1-2

Allen S.;Steckl A. 04-21-2008. A nearly ideal phosphor-converted white light-emitting diode Applied Physics Letters, 92 14,

Chao L.;Steckl A. 04-19-1999. Room-temperature visible and infrared photoluminescence from Pr-implanted GaN films by focused-ion-b Applied Physics Letters, 74 16, 2364-2366

Han D.;Sherman S.;Filocamo S.;Steckl A. 04-15-2017. Long-term antimicrobial effect of nisin released from electrospun triaxial fiber membranes Acta Biomaterialia, 53 , 242-249

Birkhahn R.;Garter M.;Steckl A. 04-12-1999. Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates Applied Physics Letters, 74 15, 2161-2163

Steckl A.;You H.;Kim D. 04-11-2011. Flexible electrowetting and electrowetting on flexible substrates Proceedings of SPIE - The International Society for Optical Engineering, 7956 ,

Park J.;Steckl A. 04-11-2006. Site specific Eu ³⁺ stimulated emission in GaN host Applied Physics Letters, 88 1,

Han D.;Yu X.;Chai Q.;Ayres N.;Steckl A. 04-05-2017. Stimuli-Responsive Self-Immolative Polymer Nanofiber Membranes Formed by Coaxial Electrospinning ACS Applied Materials and Interfaces, 9 13, 11858-11865

Heikenfeld J.;Steckl A. 04-01-2002. Electroluminescent devices using a high-temperature stable GaN-based phosphor and thick-film dielect IEEE Transactions on Electron Devices, 49 4, 557-563

Lee B.;Chi C.;Chyr I.;Lee D.;Beyette F.;Steckl A. 04-01-2002. In-situ Er-doped GaN optical storage devices using high-resolution focused ion beam milling Optical Engineering, 41 4, 742-743

Nepal N.;Zavada J.;Lee D.;Steckl A.;Sedhain A.;Lin J.;Jiang H. 03-31-2009. Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys Applied Physics Letters, 94 11,

Yu Z.;Li W.;Hagen J.;Zhou Y.;Klotzkin D.;Grote J.;Steckl A. 03-20-2007. Photoluminescence and lasing from deoxyribonucleic acid (DNA) thin films doped with sulforhodamine Applied Optics, 46 9, 1507-1513

Lee D.;Heikenfeld J.;Birkhahn R.;Garter M.;Lee B.;Steckl A. 03-20-2000. Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu Applied Physics Letters, 76 12, 1525-1527

Gomez E.;Steckl A. 03-18-2015. Improved performance of OLEDs on cellulose/epoxy substrate using adenine as a hole injection layer ACS Photonics, 2 3, 439-445

Lee D.;Steckl A. 03-18-2002. Lateral color integration on rare-earth-doped GaN electroluminescent thin films Applied Physics Letters, 80 11, 1888-1890

Nyein E.;Hömmerich U.;Heikenfeld J.;Lee D.;Steckl A.;Zavada J. 03-17-2003. Spectral and time-resolved photoluminescence studies of Eu-doped GaN Applied Physics Letters, 82 11, 1655-1657

Dalirirad S.;Steckl A. 03-15-2019. Aptamer-based lateral flow assay for point of care cortisol detection in sweat Sensors and Actuators, B: Chemical, , 79-86

Heikenfeld J.;Lee D.;Garter M.;Birkhahn R.;Steckl A. 03-13-2000. Low-voltage GaN:Er green electroluminescent devices Applied Physics Letters, 76 11, 1365-1367

Bodiou L.;Braud A.;Doualan J.L.;Moncor? R.;Park J.H.;Munasinghe C.;Steckl A.J.;Lorenz K.;Alves E.;Daudin B. 03-09-2009. Optically active centers in Eu implanted, Eu in situ doped GaN, and Eu doped GaN quantum dots Journal of Applied Physics, 105 4,

Wang R.;Steckl A.;Brown E.;Hommerich U.;Zavada J. 03-09-2009. Effect of Si codoping on Eu3+ luminescence in GaN Journal of Applied Physics, 105 4,

Purandare S.;Gomez E.;Steckl A. 03-07-2014. High brightness phosphorescent organic light emitting diodes on transparent and flexible cellulose f Nanotechnology, 25 9,

Zocco A.T.;You H.;Hagen J.A.;Steckl A.J. 03-07-2014. Pentacene organic thin-film transistors on flexible paper and glass substrates Nanotechnology, 25 9,

Glinka Y.;Everitt H.;Lee D.;Steckl A. 03-03-2009. Effect of Tm3+ -induced defects on the photoexcitation energy relaxation in Tm-doped Alx Ga1-x N Physical Review B - Condensed Matter and Materials Physics, 79 11,

Li H.;Han D.;Hegener M.;Pauletti G.;Steckl A. 03-01-2017. Flow reproducibility of whole blood and other bodily fluids in simplified no reaction lateral flow a Biomicrofluidics, 11 2,

Li W.;Hagen J.;Jones R.;Heikenfeld J.;Steckl A. 03-01-2007. Color tunable organic light emitting diodes using Eu complex doping Solid-State Electronics, 51 3, 500-504

Banerjee S.;Baker C.;Steckl A.;Klotzkin D. 03-01-2005. Optical properties of Er in Er-doped Zn<inf>2</inf>Si<inf>0.5</inf>Ge<inf Journal of Lightwave Technology, 23 3, 1342-1349

Baker C.;Heikenfeld J.;Yu Z.;Steckl A. 03-01-2004. Optical amplification and electroluminescence at 1.54 ?m in Er-doped zinc silicate germanate on sili Applied Physics Letters, 84 9, 1462-1464

Madapura S.;Steckl A.;Loboda M. 03-01-1999. Heteroepitaxial growth of SiC on Si(100) and (111) by chemical vapor deposition using trimethylsilan Journal of the Electrochemical Society, 146 3, 1197-1202

Munasinghe C.;Steckl A. 02-21-2006. GaN:Eu electroluminescent devices grown by interrupted growth epitaxy Thin Solid Films, 496 2, 636-642

Wang R.;Steckl A. 02-15-2010. Effect of growth conditions on Eu3+ luminescence in GaN Journal of Crystal Growth, 312 5, 680-684

Steckl A. 02-08-2013. Circuits on cellulose IEEE Spectrum, 50 2, 48-61

Wang R.;Steckl A.;Nepal N.;Zavada J. 02-05-2010. Electrical and magnetic properties of GaN codoped with Eu and Si Journal of Applied Physics, 107 1,

Kim D.;Steckl A. 02-05-2007. Liquid-state field-effect transistors using electrowetting Applied Physics Letters, 90 4,

Lee D.;Steckl A. 02-04-2002. Ga flux dependence of Er-doped GaN luminescent thin films Applied Physics Letters, 80 5, 728-730

Munasinghe C.;Heikenfeld J.;Dorey R.;Whatmore R.;Bender J.;Wager J.;Steckl A. 02-01-2005. High brightness ZnS and GaN electroluminescent devices using PZT thick dielectric layers IEEE Transactions on Electron Devices, 52 2, 194-203

Peng H.;Lee C.;Everitt H.;Lee D.;Steckl A.;Zavada J. 01-31-2005. Effect of optical excitation energy on the red luminescence of Eu3+ in GaN Applied Physics Letters, 86 5, 1-3

Wang Y.;Steckl A. 01-27-2003. Three-color integration on rare-earth-doped GaN electroluminescent thin films Applied Physics Letters, 82 4, 502-504

Lee D.;Heikenfeld J.;Steckl A. 01-21-2002. Growth-temperature dependence of Er-doped GaN luminescent thin films Applied Physics Letters, 80 3, 344-346

Garter M.;Scofield J.;Birkhahn R.;Steckl A. 01-11-1999. Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes Applied Physics Letters, 74 2, 182-184

Chi C.;Steckl A. 01-08-2001. Digital thin-film color optical memory Applied Physics Letters, 78 2, 255-257

Zhong M.;Roberts J.;Kong W.;Brown A.;Steckl A. 01-06-2014. P-type GaN grown by phase shift epitaxy Applied Physics Letters, 104 1,

Lee D.;Steckl A. 01-06-2003. Selective enhancement of blue electroluminescence from GaN:Tm Applied Physics Letters, 82 1, 55-57

Chaudhuri J.;Cheng X.;Yuan C.;Steckl A. 01-05-1997. Highly perfect thin films of SiC: X-ray double crystal diffractometry and X-ray double crystal topog Thin Solid Films, 292 1-2, 1-6

Li H.;Steckl A. 01-02-2019. Paper Microfluidics for Point-of-Care Blood-Based Analysis and Diagnostics Analytical Chemistry, 91 1, 352-371

Han D.;Steckl A.J. 01-01-2019. Coaxial Electrospinning Formation of Complex Polymer Fibers and their Applications ChemPlusChem, ,

Li H.;Han D.;Pauletti G.;Hegener M.;Steckl A. 01-01-2018. Cellulose-based lateral flow device for low-cost point-of-care blood coagulation monitoring International Conference on Nanotechnology for Renewable Materials 2018, 1 , 255-264

Li H.;Han D.;Pauletti G.;Steckl A. 01-01-2018. Engineering a simple lateral flow device for animal blood coagulation monitoring Biomicrofluidics, 12 1,

Steckl A.;Nelson R.;French B.;Schecter D. 01-01-2017. APPLICATION OF CHARGE-COUPLED DEVICES TO INFRARED DETECTION AND IMAGING. , , 256-269

Gomez E.;Venkatraman V.;Grote J.;Steckl A. 01-01-2015. Organic Light-Emitting Diodes: Exploring the Potential of Nucleic Acid Bases in Organic Light Emitti Advanced Materials, 27 46, 7680

Gomez E.;Venkatraman V.;Grote J.;Steckl A. 01-01-2015. Exploring the Potential of Nucleic Acid Bases in Organic Light Emitting Diodes Advanced Materials, 27 46, 7552-7562

Ouchen F.;Gomez E.;Joyce D.;Williams A.;Kim S.;Heckman E.;Johnson L.;Yaney P.;Venkat N.;Steckl A.;Kajzar F.;Rau I.;Pawlicka A.;Prasad P.;Grote J. 01-01-2015. Bio-based materials for electronic applications Nonlinear Optics Quantum Optics, 46 2-4, 199-225

Fraiwan A.;Adusumilli S.P.;Han D.;Steckl A.J.;Call D.F.;Westgate C.R.;Choi S. 01-01-2014. Microbial power-generating capabilitie on micro-/nano-structured anodes in micro-sized microbial fue Fuel Cells, 14 6, 801-809

Fraiwan A.;Adusumilli S.P.;Han D.;Steckl A.J.;Call D.F.;Westgate C.R.;Choi S. 01-01-2014. Micro-/nano-structured anodes for enhanced performance of micro-sized microbial fuel cells Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop, , 203-206

Li H.;Han D.;Pauletti G.;Steckl A. 01-01-2014. Point-of-care blood coagulation monitoring using lateral flow device 18th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2014, , 1575-1577

Ouchen F.;Gomez E.;Joyce D.;Williams A.;Kim S.;Heckman E.;Johnson L.;Yaney P.;Venkat N.;Steckl A.;Kajzar F.;Rau I.;Pawlicka A.;Prasad P.;Grote J. 01-01-2014. Latest advances in biomaterials: From deoxyribonucleic acid to nucleobases Proceedings of SPIE - The International Society for Optical Engineering, 8983 ,

Steckl A.;Spaeth H.;You H.;Gomez E.;Grote J. 01-01-2011. DNA as an optical material Optics and Photonics News, 22 7-8, 34-39

Park J.;Steckl A. 01-01-2008. Effect of process conditions on gain and loss in GaN:Eu cavities on different substrates Physica Status Solidi (A) Applications and Materials Science, 205 1, 26-29

Steckl A. 01-01-2007. DNA - A new material for photonics? Nature Photonics, 1 1, 3-5

Dierolf V.;Fleischman Z.;Sandmann C.;Munasinghe C.;Steckl A. 01-01-2006. Site selective spectroscopy of Eu-doped GaN Optics InfoBase Conference Papers, ,

Katchkanov V.;Mosselmans J.F.W.;O'Donnell K.P.;Nogales E.;Hernandez S.;Martin R.W.;Steckl A.;Lee D.S. 01-01-2006. Extended X-ray absorption fine structure studies of GaN epilayers doped with Er Optical Materials, 28 6-7, 785-789

Park J.;Steckl A. 01-01-2006. Visible lasing from GaN:Eu optical cavities on sapphire substrates Optical Materials, 28 6-7, 859-863

Park J.;Steckl A.;Rajagopal P.;Roberts J.;Piner E. 01-01-2006. Growth temperature dependence of optical modal gain and loss in GaN:Eu active medium on Si Optics Express, 14 12, 5307-5312

Everitt H.; Lee D.; Munasinghe C.; Peng H.; Steckl A. 01-01-2005. Relaxation dynamics in rare earth-doped GaN Optics InfoBase Conference Papers, ,

Grote J.; Hagen J.; Heckman E.; Hopkins F.; Steckl A.; Yaney P.; Zetts J. 01-01-2005. DNA based photonic materials Optics InfoBase Conference Papers, ,

Dierolf V.;Fleischman Z.;Sandmann C.;Munasinghe C.;Steckl A. 01-01-2005. Site selective spectroscopy of Eu-doped GaN Optics InfoBase Conference Papers, ,

Heikenfeld J.;Steckl A. 01-01-2005. Intense switchable fluorescence in light wave coupled electrowetting devices Applied Physics Letters, 86 1,

Nyein E.;Hömmerich U.;Zavada J.;Lee D.;Steckl A.;Nepal N.;Lin J.;Jiang H. 01-01-2004. Ultraviolet and blue emission properties of Tm doped AlGaN and AlN OSA Trends in Optics and Photonics Series, 96 A , 1281-1282

Lee C.W.;Everitt H.O.;Javada J.M.;Steckl A.J. 01-01-2003. Temperature dependent visible photoluminescence of Eudoped GaN on silicon OSA Trends in Optics and Photonics Series, 88 , 999-1000

Lee D.S.;Steckl A.J.;Hömmerich U.;Nyein E.E.;Rack P.;Fitzgerald J.;Zavada J.M. 01-01-2003. Enhanced blue emission from tm-doped AlxGa1-xN electroluminescent thin films 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, , 5-6

Munasinghe C.;Heikenfeld J.;Dorey R.;Whatmore R.;Bender J.;Wager J.;Steckl A. 01-01-2003. Improved luminance and efficiency of ZnS:Mn and GaN:Eu TDEL devices using PZT thick dielectric films 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, , 75-76

Nyein E.;Hömmerich U.;Heikenfeld J.;Lee D.;Steckl A.;Zavada J. 01-01-2003. Characterization of the red light emission from Eu doped GaN OSA Trends in Optics and Photonics Series, 88 , 1005-1006

Steckl A.;Allen S.;Heikenfeld J. 01-01-2003. Hybrid inorganic/organic luminescent devices 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, , 38-39

Steckl A.;Lee D.;Heikenfeld J.;Munasinghe C.;Pan M.;Wang Y.;Yu Z.;Park J.;Baker C.;Jones R. 01-01-2003. Rare earth doped GaN electroluminescent devices IEEE International Symposium on Compound Semiconductors, Proceedings, 2003-January , 147-148

Cheng L.;Pan M.;Scofield J.;Steckl A. 01-01-2002. Growth and doping of SiC-thin films on low-stress, amorphous Si<inf>3</inf>N<inf>4 Journal of Electronic Materials, 31 5, 361-365

Garter M.;Steckl A. 01-01-2002. Temperature behavior of visible and infrared electroluminescent devices fabricated on erbium-doped G IEEE Transactions on Electron Devices, 49 1, 48-54

Nyein E.;Hömmerich U.;Heikenfeld J.;Lee D.;Steckl A.;Zavada J. 01-01-2002. Spectroscopic evaluation of rare earth doped GaN for full-color display applications Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, , 654

Chi R.;Steckl A. 01-01-2001. Digital thin film non-volatile optical memory Annual Device Research Conference Digest, , 137-138

Heikenfeld J.;Steckl A. 01-01-2001. Rare-earth doped gan electroluminescent devices for robust flat panel displays Annual Device Research Conference Digest, , 177-178

Chao L.;Steckl A. 01-01-2000. CW blue-green light emission from GaN and SiC by sum-frequency generation and second harmonic genera Journal of Electronic Materials, 29 9, 1059-1062

Chen J.;Steckl A.;Loboda M. 01-01-2000. Growth and characterization of N-doped SiC films from trimethylsilane Materials Science Forum, 338 ,

Citrin P.;Northrup P.;Birkhahn R.;Steckl A. 01-01-2000. Local structure and bonding of luminescent Er in GaN: A contrast with Er in Si IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, 2000-January , 15-22

Hommerich U.;Seo J.;MacKenzie J.;Abernathy C.;Birkhahn R.;Steckl A.;Zavada J. 01-01-2000. Comparison of the optical properties of Er³⁺ doped gallium nitride prepared b Materials Research Society Symposium - Proceedings, 595 ,

Hommerich U.;Seo J.T.;MacKenzie J.D.;Abernathy C.R.;Birkhahnt R.;Steckl A.J.;Zavada J.M. 01-01-2000. Comparison of the optical properties of er³⁺ doped gallium nitride prepared b Materials Research Society Symposium - Proceedings, 595 , W11651-W11656

Lorenz K.;Vianden R.;Birkhahn R.;Steckl A.;Da Silva M.;Scares J.;Alves E. 01-01-2000. RBS/Channeling study of Er doped GaN films grown by MBE on Si(111) substrates Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 161 , 946-951

Seshadri B.;Tang J.;Chyr I.;Steckl A.;Beyette F. 01-01-2000. Novel photoreceiver array with near field resolution capability LEOS Summer Topical Meeting, , 59-60

Tang J.;Lee B.;Chi R.;Steckl A.;Beyette F. 01-01-2000. Optoelectronic page-oriented database filter based on a single chip photonic VLSI design LEOS Summer Topical Meeting, , 71-72

Pacheco F.;Sánchez A.;Molina S.;Araújo D.;Devrajan J.;Steckl A.;García R. 01-01-1999. Electron microscopy study of SiC obtained by the carbonization of Si(111) Thin Solid Films, 343-344 1-2, 305-308

Steckl A.J.;Zavada J.M. 01-01-1999. Optoelectronic properties and applications of rare-earth-doped GaN MRS Bulletin, 24 9, 33-38

Lee B.K.;Steckl A.J.;Zavada J.M.;Wilson R.G. 01-01-1998. Effect of hydrogen/deuterium introduction on photoluminescence of 3C-SiC crystals Materials Research Society Symposium - Proceedings, 513 , 445-450

Steckl A. 01-01-1997. Exploring the frontiers of optoelectronics with FIB technology Advanced Workshop on Frontiers in Electronics, Proceedings, WOFE, , 47-50

Steckl A.;Devrajan J.;Tran C.;Stall R. 01-01-1997. Growth and characterization of GaN thin films SiC SOI substrates Journal of Electronic Materials, 26 3, 217-223

Steckl A.;Devrajan J.;Choyke W.;Devaty R.;Yoganathan M.;Novak S. 01-01-1996. Effect of annealing temperature on 1.5 ?m photoluminescence from Er-implanted 6H-SiC Journal of Electronic Materials, 25 5, 869-873

Li J.;Steckl A. 01-01-1995. Nucleation and Void Formation Mechanisms in SiC Thin Film Growth on Si by Carbonization Journal of the Electrochemical Society, 142 2, 634-641

Steckl A.J.;Xu J. 01-01-1995. Si Oxyhydrides on Stain-Etched Porous Si Thin Films and Correlation with Crystallinity and Photolumi Journal of the Electrochemical Society, 142 5, L69-L71

Wei L.;Vaudin M.;Hwang C.S.;White G.;Xu J.;Steckl A.J. 01-01-1995. Heat conduction in silicon thin films: Effect of microstructure Journal of Materials Research, 10 8, 1889-1896

Yih P.;Steckl A. 01-01-1995. Residue-Free Reactive Ion Etching of Silicon Carbide in Fluorinated Plasmas Journal of the Electrochemical Society, 142 1, 312-319

Yih P.;Steckl A. 01-01-1995. Residue-Free Reactive Ion Etching of 3C-SiC and 6H-SiC in Fluorinated Mixture Plasmas Journal of the Electrochemical Society, 142 8, 2853-2860

Chen P.;Steckl A. 01-01-1994. Vacancy injection enhanced Al-Ga inter-diffusion in Si FIB implanted superlattice Materials Research Society Symposium Proceedings, 325 , 37-42

Choo A.;Cao X.;Tlali S.;Jackson H.;Chen P.;Steckl A.;Boyd J. 01-01-1994. Raman and photoluminescence characterization of FIB patterned AlGaAs/GaAs multiple quantum wells Materials Research Society Symposium Proceedings, 324 , 193-198

Chyan O.;Franh D.;Hubbard A.;Li J.;Steckl A. 01-01-1994. Measurement of complete Auger electron emission angular distributions from ?-SiC films on Si(100) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 12 2, 457-464

Kumar M.;Goo Choo A.;Chen P.;De Brabander G.;Boyd J.;Jackson H.;Steckl A.;Burnham R.;Smith S. 01-01-1994. Characterization of optical channel waveguides formed by fib induced compositional mixing in algaas Superlattices and Microstructures, 15 4, 421-425

Steckl A.;Xu J.;Mogul H. 01-01-1994. Crystallinity and Photoluminescence in Stain-Etched Porous Si Journal of the Electrochemical Society, 141 3, 674-679

Steckl A.;Yuan C.;Tong Q.;Gösele U.;Loboda M. 01-01-1994. SiC Silicon-On-Insulator Structures by Direct Carbonization Conversion and Postgrowth from Silacyclo Journal of the Electrochemical Society, 141 6, L66-L68

Xu J.;Steckl A. 01-01-1994. Visible Electroluminescence from Stain-Etched Porous Si Diodes IEEE Electron Device Letters, 15 12, 507-509

Yan H.;Wang H.;Steckl A. 01-01-1994. Low energy ion beam assisted deposition of low resistivity aluminum using TMAA Materials Research Society Symposium Proceedings, 316 , 863-868

Yih P.;Li J.;Steckl A. 01-01-1994. SiC/Si Heterojunction Diodes Fabricated by Self-Selective and by Blanket Rapid Thermal Chemical Vapo IEEE Transactions on Electron Devices, 41 3, 281-287

Kumar M.;Gupta V.;DeBrabander G.;Chen P.;Boyd J.;Steckl A.;Choo A.;Jackson H.;Burnham R.;Smith S. 01-01-1993. Optical Channel Waveguides in AlGaAs Multiple-Quantum-Well Structures Formed by Focused Ion-Beam-Ind IEEE Photonics Technology Letters, 5 4, 435-438

Li J.;Steckl A. 01-01-1993. Accurate Determination of Defects in the Gate Oxide of Si Metal Oxide Semiconductor Devices by Propa Journal of the Electrochemical Society, 140 6, L89-L92

Li J.;Yih P.;Steckl A. 01-01-1993. Thickness Determination of SiC-on-Si Thin Films by Anisotropic Reactive Ion Etching and Preferential Journal of the Electrochemical Society, 140 1, 178-182

Mogul H.;Steckl A. 01-01-1993. Electrical Properties of Si p&lt;sup&gt;+&lt;/sup&gt;-n Junctions for Sub-0.25 ?m CM IEEE Transactions on Electron Devices, 40 10, 1823-1829

Yih P.;Steckl A. 01-01-1993. Effects of Hydrogen Additive on Obtaining Residue-Free Reactive Ion Etching of (?-SiC in Fluorinated Journal of the Electrochemical Society, 140 6, 1813-1824

Steckl A.;Li J. 01-01-1992. Epitaxial growth of ?-SiC on Si by RTCVD with C&lt;inf&gt;3&lt;/inf&gt;H&lt;inf& IEEE Transactions on Electron Devices, 39 1, 64-74

Lin C.;Steckl A. 01-01-1990. Fabrication of sub-micrometer PMOSFETs with sub-100 nm p⁺-n shallow junctions Solid State Electronics, 33 4, 472-474

Pan W.;Steckl A. 01-01-1990. Reactive Ion Etching of SiC Thin Films by Mixtures of Fluorinated Gases and Oxygen Journal of the Electrochemical Society, 137 1, 212-220

Chu S.;Steckl A. 01-01-1988. The Effect of Trench-Gate-Oxide Structure on EPROM Device Operation IEEE Electron Device Letters, 9 6, 284-286

Lin C.M.;Steckl A.J.;Chow T.P. 01-01-1988. Electrical Properties of Ga-Implanted Si p&lt;sup&gt;+&lt;/sup&gt;-n Shallow Junctio IEEE Electron Device Letters, 9 11, 594-597

Bencuya S.;Steckl A.;Burkey B. 01-01-1987. Impact of edge effects on charge-packet-splitting accuracy Solid State Electronics, 30 3, 299-305

Corelli J.;Steckl A.;Pulver D.;Randall J. 01-01-1987. Ultralow dose effects in ion-beam induced grafting of polymethylmethacrylate (PMMA) Nuclear Inst. and Methods in Physics Research, B, 19-20 PART 2, 1009-1012

Zetterlund B.;Steckl A. 01-01-1987. Low-Temperature Operation of Silicon Surface-Channel Charge-Coupled Devices IEEE Transactions on Electron Devices, 34 1, 39-51

Chu S.;Corelli J.;Steckl A.;Reuss R.;Clark W.;Rensch D.;Morris W. 01-01-1986. COMPARISON OF NPN TRANSISTORS FABRICATED WITH BROAD BEAM AND SPATIAL PROFILING USING FOCUSED BEAM IO Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 4 1, 375-379

Kim S.;Choi J.;Pulver D.;Moore J.;Corelli J.;Steckl A.;Randall J. 01-01-1986. OPTIMIZATION OF SOLVENT DEVELOPMENT IN RADIATION INDUCED GRAFT LITHOGRAPHY OF POLY(METHYLMETHACRYLAT Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 4 1, 403-408

King D.;Steckl A.;Morgenstern J.;McDonald J.;Bourgeois M.;Yemc D.;Elminyawi I. 01-01-1986. FLIP-AND-SHIFT SIGNAL ENHANCEMENT APPLICATION FOR A PREDICTIVE ELECTRON-BEAM PATTERN REGISTRATION MO Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 4 1, 273-279

Lu W.J.;Steckl A.J. 01-01-1986. Electrical Characteristics of Si Devices Fabricated with Completely Consumed Carbide (C3) Dielectric Journal of the Electrochemical Society, 133 6, 1180-1185

McDonald J.F.;Steckl A.J.;Neugebauer C.A.;Carlson R.O. 01-01-1986. Multilevel interconnections for wafer scale integration Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 4 6, 3127-3138

Steckl A. 01-01-1986. Particle-Beam Fabrication and In Situ Processing of Integrated Circuits Proceedings of the IEEE, 74 12, 1753-1774

Steckl A.;Balakrishnan S.;Jin H.;Corelli J. 01-01-1986. Micromachining of polyimide films with focused ion beams Microelectronic Engineering, 5 1-4, 461-462

Steckl A.;Lin C.;Chu S.;Corelli J. 01-01-1986. Simulation of graded-base bipolar transistor characteristics fabricated with a focused ion beam Microelectronic Engineering, 5 1-4, 179-189

Steckl A.;Murarka S.;Corelli J. 01-01-1986. IN-SITU PROCESSING OF SEMICONDUCTOR DEVICES AND CUSTOM INTEGRATED CIRCUITS. Proceedings of the Custom Integrated Circuits Conference, , 586-590

Sugiura J.;Lu W.;Cadien K.;Steckl A. 01-01-1986. REACTIVE ION ETCHING OF SiC THIN FILMS USING FLUORINATED GASES. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 4 1, 349-354

Chow T.P.;Steckl A.J. 01-01-1985. CRITIQUE OF REFRACTORY GATE APPLICATIONS FOR MOS VLSI. VLSI Electronics, Microstructure Science, 9 , 37-91

Lu W.;Steckl A.;Chow T. 01-01-1985. COMPLETELY CONSUMED CARBIDE (C**3) - A NEW PROCESS FOR DIELECTRIC ISOLATION. Electrochemical Society Extended Abstracts, 85-1 , 327-329

Lu W.;Steckl A.;Chow T. 01-01-1985. COMPLETELY CONSUMED CARBIDE (C**3) - A NEW PROCESS FOR DIELECTRIC ISOLATION. Proceedings - The Electrochemical Society, 85-5 , 244-252

Vogelsong T.L.;Tiemann J.J.;Steckl A.J. 01-01-1985. Charge-Domain Integrated Circuits for Signal Processing IEEE Journal of Solid-State Circuits, 20 2, 562-570

Bencuya S.;Steckl A. 01-01-1984. Charge-Packet Splitting In Charge-Domain Devices IEEE Transactions on Electron Devices, 31 10, 1494-1501

Hamadeh H.;Corelli J.;Steckl A.;Berry I. 01-01-1984. FOCUSED Ga** plus BEAM DIRECT IMPLANTATION FOR Si DEVICE FABRICATION. Journal of Vacuum Science &amp; Technology B: Microelectronics Processing and Phenomena, 3 1, 91-93

Haslam M.;McDonald J.;King D.;Bourgeois M.;Chow D.;Steckl A. 01-01-1984. TWO-DIMENSIONAL HAAR THINNING FOR DATA BASE COMPACTION IN FOURIER PROXIMITY CORRECTION FOR ELECTRON Journal of Vacuum Science &amp; Technology B: Microelectronics Processing and Phenomena, 3 1, 165-173

Lu W.;Steckl A. 01-01-1984. Thermal Oxidation of Sputtered Silicon Carbide Thin Films Journal of the Electrochemical Society, 131 8, 1907-1914

McDonald J.;Rogers E.;Rose K.;Steckl A. 01-01-1984. TRIALS OF WAFER-SCALE INTEGRATION. IEEE Spectrum, 21 10, 32-39

Chow D.;McDonald J.;King D.;Smith W.;Molnar K.;Steckl A. 01-01-1983. IMAGE PROCESSING APPROACH TO FAST, EFFICIENT PROXIMITY CORRECTION FOR ELECTRON BEAM LITHOGRAPHY. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1 4, 1383-1390

Chow T.;Steckl A. 01-01-1983. Refractory Metal Silicides: Thin-Film Properties and Processing Technology IEEE Transactions on Electron Devices, 30 11, 1480-1497

Bencuya S.S.;Steckl A.J.;Vogelsong T.L.;Tiemann J.J. 01-01-1982. Dynamic Packet Splitting in Charge Domain Devices IEEE Electron Device Letters, 3 9, 268-270

Chow T.;Steckl A. 01-01-1982. Refractory MoSi2 and MoSi2/Polysilicon Bulk CMOS Circuits IEEE Electron Device Letters, 3 2, 37-40

Smith G.;Steckl A. 01-01-1982. RECIPE—A Two-Dimensional VLSI Process Modeling Program IEEE Transactions on Electron Devices, 29 2, 216-221

Tiemann J.J.;Vogelsong T.L.;Steckl A.J. 01-01-1982. Charge Domain Recursive Filters IEEE Journal of Solid-State Circuits, 17 3, 597-605

Vidinski W.;Steckl A.;Corelli J. 01-01-1982. Photoexcitation properties of infrared active defects induced by neutron irradiation in silicon Journal of Nuclear Materials, 108-109 C, 693-699

Okazaki S.;Chow T.;Steckl A. 01-01-1981. Edge-Defined Patterning of Hyperfine Refractory Metal Silicide MOS Structures IEEE Transactions on Electron Devices, 28 11, 1364-1368

Steckl A.;McDonald J.;Gutmann R. 01-01-1981. VLSI DESIGN AUTOMATION AND INTERACTIVE MODELING FOR ELECTRON BEAM LITHOGRAPHY. Journal of macromolecular science. Chemistry, , 172-176

Tam K.;Steckl A. 01-01-1981. Integrated PbS-Si IR Detector Read-Out IEEE Electron Device Letters, EDL-2 5, 130-132

Chow T.;Steckl A. 01-01-1980. PLANAR PLASMA ETCHING OF Mo AND MoSi<inf>2</inf> USING NF<inf>3</inf>. Technical Digest - International Electron Devices Meeting, , 149-151

Elabd H.;Steckl A.;Vidinski W. 01-01-1980. Effect of substrate orientation on the properties of the Si/PbS heterojunction Solar Cells, 1 2, 199-208

Motamedi M.;Tam K.;Steckl A. 01-01-1980. Design and Evaluation of Ion-Implanted CMOS Structures IEEE Transactions on Electron Devices, 27 3, 578-583

Smith G.E.;Steckl A.J. 01-01-1980. TWO-DIMENSIONAL INTEGRATED CIRCUIT PROCESS MODELING PROGRAM - RECIPE. Technical Digest - International Electron Devices Meeting, , 227-230

Steckl A.;Elabd H.;Tam K.;Motamedi M.;Sheu S. 01-01-1980. The Optical and Detector Properties of the PbS-Si Heterojunction IEEE Transactions on Electron Devices, 27 1, 126-133

Steckl A.;Sheu S. 01-01-1980. The a.c. admittance of the p-n PbS?Si heterojunction Solid-State Electronics, 23 7, 715-720

Tiemann J.J.;Vogelsong T.L.;Steckl A.J. 01-01-1980. CHARGE DOMAIN ANALOG SAMPLED DATA FILTERS. EASCON Record: IEEE Electronics and Aerospace Systems Convention, , 140-145

Zetterlund B.;Steckl A.J. 01-01-1980. LOW TEMPERATURE RECOMBINATION LIFETIME IN Si MOSFET's. Technical Digest - International Electron Devices Meeting, , 284-288

Chow T.;Steckl A.;Motamedi M.;Brown D. 01-01-1979. MoSi<inf>2</inf>-GATE MOSFET`s FOR VLSI. Advances in Chemistry Series, , 458-461

Sheu S.;Steckl A. 01-01-1979. FREQUENCY CHARACTERISTICS OF p-n PbS-Si HETEROJUNCTION IR DETECTORS. Infrared Physics, , 351-353

Steckl A. 01-01-1979. Call for Papers Physics Today, 32 4, 15

Steckl A.J.;Tam K.Y.;Motamedi M.E. 01-01-1979. READ-OUT CHARACTERISTICS OF THE PbS-Si HJ DETECTOR. Advances in Chemistry Series, , 650-654

Steckl A. 01-01-1977. Low temperature signal linearity and harmonic distortion in charge coupled devices European Solid-State Circuits Conference, 1977-September , 97-100

Steckl A. 01-01-1976. Infrared charge coupled devices Infrared Physics, 16 1-2, 65-73

Steckl A. 01-01-1976. Infrared optical properties of sputtered In<inf>2-x</inf> Sn<inf>x</inf> O&l Infrared Physics, 16 1-2, 145-147

Steckl A. 01-01-1975. INJECTION EFFICIENCY IN HYBRID IRCCD'S. , , 85-91

Steckl A. 01-01-1975. LOW TEMPERATURE SILICON CCD OPERATION. , , 383-388

Steckl A.;Nelson R.;French B.;Gudmundsen R.;Schechter D. 01-01-1975. Application of Charge-Coupled Devices to Infrared Detection and Imaging Proceedings of the IEEE, 63 1, 67-74

Arellano M.E.;Das P.K.;Steckl A. 01-01-1972. ACOUSTO-ELECTRIC CURRENT STEPS IN OPTICALLY POLISHED PARALLEL CADMIUM SULPHIDE. , , 168-170

Steckl A.;Das P. 01-01-1972. MODEL OF THE ACOUSTOELECTRIC OSCILLATOR: FIELD-INDUCED FREQUENCY MODULATION, HARMONIC AND OFF-AXIS G , , 158-164